phase control thyristor H350TBXX symbol characteristics conditions t j ( 0 c) value unit blocking parameters v rrm repetitive peak reverse voltage 125 200-1600 v v drm repetitive peak off-stage voltage 125 200-1600 v i rrm repetitive peak reverse current v = v rrm 125 80 ma i drm repetitive peak off-state current v = v rrm 125 80 ma conducting parameters i f(av) average on-state current 180 sine, 50h z , t c = 85 0 c 350 a i rms rms on-state current 550 a i tsm surge on-state current 8 ka i 2 t i 2 t sine wave, 10ms without reverse voltage 125 320 ka 2 s v t peak on-state voltage drop on-state current = 1.1 ka 125 1.65 v v 0 threshold voltage 125 0.80 v r 0 on-state slope resistance 125 0.50 m triggering parameters i gt gate trigger current v d = 5v 25 250 ma v gt gate trigger voltage 25 2.00 v i l latching current v d = 5v 25 1000 ma p g ?peak maximum peak gate power pulse width 100 sec 150 w di/dt repetitive rate of rise of current 120 a/ sec v fgm maximum forward gate voltage 12 v i fgm maximum forward gate current 40 a thermal & mechanical parameters r th (j-c) thermal impedance, 180 conduction, sine junction to case 0.08 0 c/w r th (c-hk) thermal impedance case to heatsink 0.02 0 c/w t j maximum permissible junction temperature 125 0 c t stg storage temperature range -40 - 125 0 c f mounting torque 18 nm w weight 700 gms h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 1 of 6
phase control thyristor H350TBXX all dimensions in mm h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 2 of 6
phase control thyristor H350TBXX on state power loss 0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 50 100 150 200 250 300 350 400 450 500 550 600 it ( av ) p t(av) - w 60 0 120 0 180 0 dc maximum permissible case temp 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 400 450 500 550 600 it( av ) a t case ( 0 c) 60 0 120 0 180 0 dc h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 3 of 6
phase control thyristor H350TBXX max non repetitive surge current 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 10 time in sec i tsm (a) transient thermal impedance junction to case 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.001 0.01 0.1 1 10 time in sec r th(j-c) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 4 of 6
phase control thyristor H350TBXX on state characteristics 0 200 400 600 800 1000 1200 1400 1600 00.511.522.5 v t (v) i t(av ) a gate trigger characteristics 0.1 1 10 100 0.01 0.1 1 10 100 i g (av) - a v g(v) - v 120w (0.1ms) 25 0 c h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 5 of 6
phase control thyristor H350TBXX ordering information: - h 350 tb xx hirect make thyristor i f(av) = 350a tb ? with a pigtail v rrm = xx * 100 e.g.12 * 100 =1200v hind rectifiers ltd reserves the right to change the specifications without notice. this datasheet specifies technical information for semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. hind rectifiers ltd lake road bhandup (west) mumbai ? 400 078 tel: - +91 22 2596 8027/28/29/31 fax: - +91 22 2596 4114 e-mail: - marketing@hirect.com website: - www.hirect.com june-2008 h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 6 of 6
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